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hexfet power mosfet notes through are on page 9 features and benefits pqfn dual 3.3x3.3 mm 2 13 4 g s s g d d d d 5 6 8 7 top view applications ? dc-dc primary switch ? 48v battery monitoring absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (wirebond limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 2.3 3.1 14 20 100 1.8 4.8 3.4 -55 to + 150 2.3 0.018 10.4 features benefits low rdson (<195m 1 1. ? 1 v ds 100 v v gs max 20 v r ds(on) max (@v gs = 10v) 195 q g typ 4.2 nc i d (@t c(bottom) = 25c) 3.4 a m

! form quantity irfhm792trpbf pqfn dual 3.3mm x 3.3mm tape and reel 4000 irfhm792tr2pbf pqfn dual 3.3mm x 3.3mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

! d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 12 r jc (top) junction-to-case ??? 85 c/w r ja junction-to-ambient ??? 55 r ja (<10s) junction-to-ambient ??? 38 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 ??? ??? v ? . 0.11 1 1 .0 .0 .0 10 a . 0 a ??? ??? 250 ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 3.5 ??? ??? s q g total gate charge ??? 4.2 6.3 q gs1 pre-vth gate-to-source charge ??? 0.7 ??? q gs2 post-vth gate-to-source charge ??? 0.3 ??? q gd gate-to-drain charge ??? 1.3 ??? q godr gate charge overdrive ??? 1.9 ??? q sw switch charge (q gs2 + q gd ) ??? 1.6 ??? q oss output charge ??? 6.7 ??? nc r g gate resistance ??? 1.6 ??? t d(on) turn-on delay time ??? 3.4 ??? t r rise time ??? 4.7 ??? t d(off) turn-off delay time ??? 5.2 ??? t f fall time ??? 2.6 ??? c iss input capacitance ??? 251 ??? c oss output capacitance ??? 31 ??? c rss reverse transfer capacitance ??? 13 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 15 23 ns q rr reverse recovery charge ??? 45 68 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 50v ??? v gs = 20v v gs = -20v ??? ??? 14 ??? ??? 3.4 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 2.9a v ds = 100v, v gs = 0v v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v v gs = 0v v ds = 25v conditions max. 10.2 2.9 ? = 1.0mhz t j = 25c, i f = 2.9a, v dd = 50v di/dt = 500a/ s t j = 25c, i s = 2.9a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 10v typ. ??? r g =1.8 v ds = 50v, i d = 2.9a v ds = 100v, v gs = 0v, t j = 125c m i d = 2.9a i d = 2.9a

! fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v 60 s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 4.0v vgs top 15v 10v 8.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 2.9a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0123456 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 2.9a

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! fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 i d , d r a i n c u r r e n t ( a ) limited by wirebond -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10 a i d = 25 a i d = 250 a i d = 1.0ma 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.10 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wirebond

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! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 5 10 15 20 25 30 35 40 45 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.43a 0.98a bottom 2.90a 5 10 15 20 v gs, gate -to -source voltage (v) 100 150 200 250 300 350 400 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 2.9a t j = 25c t j = 125c

! fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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! pqfn dual 3.3x3.3 package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn dual 3.3x3.3 part marking

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! pqfn dual 3.3x3.3 tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 2.43mh, r g = 50 , i as = 2.9a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 3.4a by wirebond capabilit y. qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn dual 3.3mm x 3.3mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? revision history 12/16/2013

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